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| SMD Type NPN Silicon Power Transistor FMMT617TA SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 Features Power Dissipation: Ptot=625mW Collector Current: IC=3A +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base +0.1 0.38-0.1 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current *1 Power Dissipation at Tamb =25*2 Operating and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICM Ptot Tj:Tstg Rating 15 15 5 3 12 625 -55 to +150 Unit V V V A A mW *1. Measured under pulsed conditions. Pulse width=300ms. Duty cycle 2% *2.Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm 0-0.1 www.kexin.com.cn 1 SMD Type FMMT617TA Electrical Characteristics Ta = 25 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES IC=100A IC=10mA* IE=100A VCB=10V VEB=4V VCES=10V IC=0.1A, IB=10mA* Collector-Emitter Saturation Voltage VCE(sat) IC=1A, IB=10mA* IC=3A, IB=50mA* Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VBE(sat) VBE(om) IC=3A, IB=50mA* IC=3A, VCE=2V* IC=10mA, VCE=2V* IC=200mA, VCE=2V* Static Forward Current Transfer Ratio hFE IC=3A, VCE=2V* IC=5A, VCE=2V* IC=12A, VCE =2V* Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT Cobo t(on) t(off) IC=50mA, VCE=10V,f=50MHz VCB=10V, f=1MHz VCC=10V, IC=3A IB1=IB2=50mA Test conditions Transistors Min 15 15 5 Typ Max Unit V V V 100 100 100 8 70 150 0.9 0.84 200 300 200 150 415 450 320 240 80 80 120 30 120 160 40 14 100 200 1.0 1.0 nA nA nA mV mV mV V V MHZ pF ns ns *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 2 www.kexin.com.cn |
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